Title :
Complementary Thin-Film Electronics Based on n-Channel ZnO and p-Channel ZnTe
Author :
Bowen, Willie E. ; Wang, Weiming ; Phillips, Jamie D.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Univ. of Michigan, Ann Arbor, MI, USA
Abstract :
In this letter, we report on the fabrication of ZnO and ZnTe thin-film transistors (TFTs) on SiO2/Si substrates in a bottom-gate configuration. The ZnO TFT devices exhibit field effect mobility of mu ~ 4 cm2/V middot s and an on/off current ratio exceeding 109. The on/off-current ratio of the ZnTe devices was found to be 100, limited by the off current. Incorporation of the ZnTe and ZnO TFTs in a complementary logic circuit demonstrates inverter behavior with a high output voltage of VOH > 14 V and low output voltage of VOL < 0.2 V for a supply voltage of 15 V. The small signal gain for the transfer characteristic is found to be dVout/ dVin = -5 at Vin = 6 V.
Keywords :
II-VI semiconductors; hole mobility; integrated logic circuits; logic gates; thin film transistors; wide band gap semiconductors; zinc compounds; SiO2-Si; TFT device; ZnO; ZnTe; bottom-gate configuration; complementary logic circuit; complementary thin-film electronics; field effect mobility; inverter; on/off-current ratio; signal gain; thin-film transistor fabrication; transfer characteristics; voltage 15 V; voltage 6 V; Active matrix technology; Fabrication; Inverters; Logic circuits; Molecular beam epitaxial growth; Semiconductor thin films; Substrates; Thin film transistors; Zinc compounds; Zinc oxide; Complementary thin-film transistor (TFT) inverter; zinc oxide (ZnO); zinc telluride (ZnTe);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2009.2033949
