Title :
A High-Power and Highly Linear CMOS Switched Capacitor
Author :
Yoon, Youngchang ; Kim, Hyungwook ; Park, Yunseo ; Ahn, Minsik ; Lee, Chang-Ho ; Laskar, Joy
Author_Institution :
Georgia Electron. Design Center, Georgia Inst. of Technol., Atlanta, GA, USA
Abstract :
A new CMOS switched capacitor is developed to be used for high-power applications such as a power amplifier, where high voltage handling capability and low distortion are two major factors. In order to demonstrate superior performance of the proposed structure over a conventional structure, two designs are analyzed and compared while maintaining comparable small signal characteristics such as a 2:1 tuning ratio and a quality factor. The maximum applicable voltage swing of the proposed structure is improved over the conventional structure by a factor of VDD / Vth, or 12 dB in this design. The proposed structure also shows a greatly improved two-tone third-order inter-modulation distortion characteristic with a maximum 34 dB improvement. This proposed structure is a suitable component for tunable CMOS power amplifier applications.
Keywords :
CMOS integrated circuits; Q-factor; capacitors; switched capacitor networks; CMOS power amplifier; high-power application; highly linear CMOS switched capacitor; quality factor; signal characteristics; tuning ratio; two-tone third-order intermodulation distortion; voltage handling; voltage swing; CMOS integrated circuits; Capacitors; Linearity; Switched capacitor circuits; Switching circuits; Tunable circuits and devices; CMOS; IMD3; power capability; switched capacitor; tunable capacitor;
Journal_Title :
Microwave and Wireless Components Letters, IEEE
DOI :
10.1109/LMWC.2010.2068282