DocumentCode :
1330997
Title :
Improvement of Resistive Switching Properties in 
-Based ReRAM With Implanted Ti Ions
Author :
Liu, Qi ; Long, Shibing ; Wang, Wei ; Zuo, Qingyun ; Zhang, Sen ; Chen, Junning ; Liu, Ming
Author_Institution :
Key Lab. of Nano-Fabrication & Novel Devices Integrated Technol., Chinese Acad. of Sci., Beijing, China
Volume :
30
Issue :
12
fYear :
2009
Firstpage :
1335
Lastpage :
1337
Abstract :
In this letter, the resistive switching properties of a ZrO2-based memory film with implanted Ti ions are investigated. The testing results demonstrate that doping Ti in ZrO2 can remove the electroforming process and reduce the variations of switching parameters such as set voltage and resistance in off state. Furthermore, the Ti-doped ZrO2 resistive switching memory also exhibits high device yield (nearly 100%), low operating voltage, fast speed, large on/off ratio (>104), and long retention time (>107 s). The formation and rupture of conducting filaments are suggested to be responsible for the resistive switching phenomenon. The doped Ti impurities can improve the formation of conducting filaments and switching behaviors.
Keywords :
doping; random-access storage; ReRAM; Ti; ZrO2; conducting filaments; doped impurities; implanted ions; memory film; resistive switching properties; switching behaviors; CMOS technology; Doping; Impurities; Laboratories; Microelectronics; Nanoscale devices; Random access memory; Switches; Testing; Voltage; $ hbox{ZrO}_{2}$
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2009.2032566
Filename :
5332367
Link To Document :
