Title :
An asymmetric cladding gain-coupled DFB laser with oxide defined metal surface grating by MOCVD
Author :
Osowski, M.L. ; Hughes, J.S. ; Lammert, R.M. ; Coleman, J.J.
Author_Institution :
Microelectron. Lab., Illinois Univ., Urbana, IL, USA
Abstract :
A single growth step ridge waveguide InGaAs-GaAs distributed-feedback (DFB) laser with first-order silicon dioxide defined titanium surface gratings is described. The Ti grating introduces a periodic variation of the loss in the cavity to promote single-frequency emission. The device operates on a single longitudinal and lateral mode, with a threshold current of 20.5 mA, slope efficiency of 0.1 W/A and a side-mode-suppression ratio (SMSR) of approximately 40 dB. Moreover, a narrow spectral linewidth of about 40 kHz is achieved at an output power of 3 mW.
Keywords :
III-V semiconductors; diffraction gratings; distributed feedback lasers; gallium arsenide; indium compounds; laser cavity resonators; laser modes; optical losses; quantum well lasers; ridge waveguides; semiconductor growth; spectral line breadth; vapour phase epitaxial growth; waveguide lasers; 20.5 mA; 3 mW; DFB laser; InGaAs-GaAs; MOCVD; SiO/sub 2/-Ti; Ti grating; asymmetric cladding gain-coupled DFB laser; cavity; first-order SiO/sub 2/ defined Ti surface gratings; lateral mode; loss; narrow spectral linewidth; output power; oxide defined metal surface grating; side-mode-suppression ratio; single growth step ridge waveguide InGaAs-GaAs distributed-feedback laser; single longitudinal mode; single-frequency emission; slope efficiency; threshold current; Gratings; Laser modes; MOCVD; Power generation; Silicon compounds; Surface emitting lasers; Surface waves; Threshold current; Titanium; Waveguide lasers;
Journal_Title :
Photonics Technology Letters, IEEE
