Title :
Low-Power and Nanosecond Switching in Robust Hafnium Oxide Resistive Memory With a Thin Ti Cap
Author :
Lee, H.Y. ; Chen, Y.S. ; Chen, P.S. ; Wu, T.Y. ; Chen, F. ; Wang, C.C. ; Tzeng, P.J. ; Tsai, M.-J. ; Lien, C.
Author_Institution :
Electron. & Optoelectron. Res. Lab., Ind. Technol. Res. Inst., Hsinchu, Taiwan
Abstract :
The memory performance of hafnium oxide (HfOx)-based resistive memory containing a thin reactive Ti buffer layer can be greatly improved. Due to the excellent ability of Ti to absorb oxygen atoms from the HfOx film after post-metal annealing, a large amount of oxygen vacancies are left in the HfOx layer of the TiN/Ti/HfOx/TiN stacked layer. These oxygen vacancies are crucial to make a memory device with a stable bipolar resistive switching behavior. Aside from the benefits of low operation power and large on/off ratio (>100), this memory also exhibits reliable switching endurance (>106 cycles), robust resistance states (200??C), high device yield (~100%), and fast switching speed (<10 ns).
Keywords :
annealing; buffer layers; electrical resistivity; hafnium compounds; low-power electronics; magnetic switching; titanium; HfO; Ti; bipolar resistive switching behavior; low-power switching; memory device; memory performance; nanosecond switching; oxygen vacancy; postmetal annealing; reliable switching endurance; resistive memory; thin cap; thin reactive buffer layer; $hbox{HfO}_{x}$; Ti reactive buffer layer; resistive memory;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2009.2034670
