Title :
Gain modeling of strained InGaAsP based MQW optical amplifiers
Author :
Debaisieux, Grégoire ; Guemmouri, Moustapha ; Chelles, Sandrine ; Ougazzaden, Abdallah ; Hervé-Gruyer, Guillaume ; Filoche, Marcel ; Martin, J.-Y.
Author_Institution :
France Telecom CNET Lab., Bagneux, France
Abstract :
Experimental gain spectra of two strained multiquantum-well (MQW) optical amplifiers are compared to theoretical results obtained from Fermi´s golden rule and a four-band k/spl middot/p method. Good agreement is found for both TE and TM modes on each structure.
Keywords :
III-V semiconductors; energy gap; gallium arsenide; indium compounds; k.p calculations; laser modes; laser theory; quantum well lasers; semiconductor device models; Fermi´s golden rule; InGaAsP; TE modes; TM modes; four-band k/spl middot/p method; gain modeling; gain spectra; strained InGaAsP based MQW optical amplifiers; strained multiquantum-well optical amplifiers; Charge carrier density; Charge carrier processes; Laboratories; Optical amplifiers; Optical mixing; Optical wavelength conversion; Photonic band gap; Quantum well devices; Semiconductor optical amplifiers; Stimulated emission;
Journal_Title :
Photonics Technology Letters, IEEE
