DocumentCode
1331028
Title
Gain modeling of strained InGaAsP based MQW optical amplifiers
Author
Debaisieux, Grégoire ; Guemmouri, Moustapha ; Chelles, Sandrine ; Ougazzaden, Abdallah ; Hervé-Gruyer, Guillaume ; Filoche, Marcel ; Martin, J.-Y.
Author_Institution
France Telecom CNET Lab., Bagneux, France
Volume
9
Issue
11
fYear
1997
Firstpage
1475
Lastpage
1477
Abstract
Experimental gain spectra of two strained multiquantum-well (MQW) optical amplifiers are compared to theoretical results obtained from Fermi´s golden rule and a four-band k/spl middot/p method. Good agreement is found for both TE and TM modes on each structure.
Keywords
III-V semiconductors; energy gap; gallium arsenide; indium compounds; k.p calculations; laser modes; laser theory; quantum well lasers; semiconductor device models; Fermi´s golden rule; InGaAsP; TE modes; TM modes; four-band k/spl middot/p method; gain modeling; gain spectra; strained InGaAsP based MQW optical amplifiers; strained multiquantum-well optical amplifiers; Charge carrier density; Charge carrier processes; Laboratories; Optical amplifiers; Optical mixing; Optical wavelength conversion; Photonic band gap; Quantum well devices; Semiconductor optical amplifiers; Stimulated emission;
fLanguage
English
Journal_Title
Photonics Technology Letters, IEEE
Publisher
ieee
ISSN
1041-1135
Type
jour
DOI
10.1109/68.634713
Filename
634713
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