DocumentCode :
1331033
Title :
Dual-Gate Graphene FETs With 
of 50 GHz
Author :
Lin, Yu-Ming ; Chiu, Hsin-Ying ; Jenkins, Keith A. ; Farmer, Damon B. ; Avouris, Phaedon ; Valdes-Garcia, Alberto
Author_Institution :
IBM T J. Watson Res. Center, Yorktown Heights, NY, USA
Volume :
31
Issue :
1
fYear :
2010
Firstpage :
68
Lastpage :
70
Abstract :
A dual-gate graphene field-effect transistor is presented, which shows improved radio-frequency (RF) performance by reducing the access resistance using electrostatic doping. With a carrier mobility of 2700 cm2/V ?? s, a cutoff frequency of 50 GHz is demonstrated in a 350-nm-gate-length device. This fT value is the highest frequency reported to date for any graphene transistor, and it also exceeds that of Si MOS field-effect transistors at the same gate length, illustrating the potential of graphene for RF applications.
Keywords :
MOSFET; elemental semiconductors; graphene; millimetre wave field effect transistors; molecular electronics; silicon; MOS field-effect transistors; Si; cutoff frequency; dual-gate graphene FET; dual-gate graphene field-effect transistor; electrostatic doping; frequency 50 GHz; radiofrequency performance; size 350 nm; Access resistance; dual gate; field-effect transistor (FET); graphene; radio frequency (RF);
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2009.2034876
Filename :
5332372
Link To Document :
