• DocumentCode
    1331033
  • Title

    Dual-Gate Graphene FETs With f_{T} of 50 GHz

  • Author

    Lin, Yu-Ming ; Chiu, Hsin-Ying ; Jenkins, Keith A. ; Farmer, Damon B. ; Avouris, Phaedon ; Valdes-Garcia, Alberto

  • Author_Institution
    IBM T J. Watson Res. Center, Yorktown Heights, NY, USA
  • Volume
    31
  • Issue
    1
  • fYear
    2010
  • Firstpage
    68
  • Lastpage
    70
  • Abstract
    A dual-gate graphene field-effect transistor is presented, which shows improved radio-frequency (RF) performance by reducing the access resistance using electrostatic doping. With a carrier mobility of 2700 cm2/V ?? s, a cutoff frequency of 50 GHz is demonstrated in a 350-nm-gate-length device. This fT value is the highest frequency reported to date for any graphene transistor, and it also exceeds that of Si MOS field-effect transistors at the same gate length, illustrating the potential of graphene for RF applications.
  • Keywords
    MOSFET; elemental semiconductors; graphene; millimetre wave field effect transistors; molecular electronics; silicon; MOS field-effect transistors; Si; cutoff frequency; dual-gate graphene FET; dual-gate graphene field-effect transistor; electrostatic doping; frequency 50 GHz; radiofrequency performance; size 350 nm; Access resistance; dual gate; field-effect transistor (FET); graphene; radio frequency (RF);
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2009.2034876
  • Filename
    5332372
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1331033