An analytic model for estimating the length of the velocity saturated region in GaAs MESFETs

Author

Leifso, Curtis ; Haslett, James W.

Author_Institution

Dept. of Electr. & Comput. Eng., Calgary Univ., Alta., Canada

Volume

47

Issue

5

fYear

2000

fDate

5/1/2000 12:00:00 AM

Firstpage

905

Lastpage

909

Abstract

An analytical model is presented for estimating the length of the portion of an FET channel with velocity saturated carriers. The model is based on previous work proposed by Pucel et al. [1974, 1975], and has been adapted to remove discontinuities between extreme bias conditions. The need for complicated numerical solutions has also been removed making the model suitable for use with circuit simulators. Results obtained from the model agree well with previously proposed models over a wide range of bias conditions where velocity saturation can be either dominant or negligible, depending on the overall channel length and bias conditions

Keywords

III-V semiconductors; Schottky gate field effect transistors; carrier mobility; gallium arsenide; semiconductor device models; GaAs; MESFETs; analytical model; circuit simulators; extreme bias conditions; overall channel length; velocity saturated region; Analytical models; Boundary conditions; Circuit simulation; Computational modeling; Councils; FETs; Gallium arsenide; MESFETs; Semiconductor device modeling; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.841219

Filename

841219