Title :
Dual charge integrating amplifier circuit using two GaInAs-InP pin photodiodes for ultraweak light detection in the near infrared region
Author :
Makiuchi, Masao ; Miyazaki, Junji ; Shiraishi, Takuo ; Kakinuma, Katsuko ; Inaba, Humio
Author_Institution :
Biophotonics Inf. Labs., Yamagata, Japan
Abstract :
A novel detection system based on a dual charge integrating amplifier (dual-CIA) circuit that employs two GaInAs-InP pin photodiodes, has been developed for the detection of the ultraweak, near-infrared light generated by chemical and biochemical reactions. The minimum detectable power was measured to be as low as 0.9/spl times/10/sup -15/ W. Using this system, we were able to detect the ultraweak light (around 1268 nm), emitted from singlet oxygen molecules during the chemical reaction between OCl/sup -/ and H/sub 2/O/sub 2/, for a given H/sub 2/O/sub 2/ concentration that is far lower than those reported previously.
Keywords :
III-V semiconductors; MOS integrated circuits; electric charge; gallium arsenide; indium compounds; infrared detectors; integrated optoelectronics; p-i-n photodiodes; photodetectors; 1268 nm; GaInAs-InP; GaInAs-InP pin photodiodes; H/sub 2/O/sub 2/; H/sub 2/O/sub 2/ concentration; OCl; OCl/sup -/; biochemical reactions; chemical reaction; chemical reactions; detection system; dual charge integrating amplifier circuit; minimum detectable power; near infrared region; singlet oxygen molecules; ultraweak light detection; ultraweak near-infrared light generation; Background noise; Capacitance; Circuit noise; Dark current; Differential amplifiers; Extraterrestrial measurements; FETs; Infrared detectors; Optical noise; PIN photodiodes;
Journal_Title :
Photonics Technology Letters, IEEE
