Title :
The effect of Co incorporation on electrical characteristics of n +/p shallow junction formed by dopant implantation into CoSi 2 and anneal
Author :
Park, Ji-Soo ; Sohn, Dong Kyun ; Bae, Jong-Uk ; Han, Chang Hee ; Park, Jin Won
Author_Institution :
R&D DIv., Hyundai Micro Electron. Co. Ltd., Cheongje, South Korea
fDate :
5/1/2000 12:00:00 AM
Abstract :
The impact of Co incorporation on the electrical characteristics has been investigated in n+/p junction formed by dopant implantation into CoSi2 and drive-in anneal. The junctions were formed by As+ (30 or 40 keV, 1×1016 cm -2) implantation into 35 nm-thick CoSi2 followed by drive-in annealing at 900°C for 30 s in an N2 ambient. Deeper junction implanted by As+ at 40 keV was not influenced by the Co incorporation. However, for shallower junction implanted by As + at 30 keV, incorporation of Co atoms increased its leakage current, which were supposed to be dissociated from the CoSi2 layer by silicide agglomeration during annealing. The mechanism of such a high leakage current was found to be Poole-Frenkel barrier lowering induced by high density of Co traps
Keywords :
annealing; arsenic; cobalt compounds; interface states; ion implantation; leakage currents; p-n junctions; semiconductor technology; 30 keV; 30 s; 35 nm; 40 keV; 900 C; As+ implantation; Co incorporation; CoSi2 layer; CoSi2:As-Si; N2; N2 ambient; Poole-Frenkel barrier lowering; Si; dopant implantation; drive-in annealing; electrical characteristics; high Co trap density; leakage current; n+/p shallow junction; silicide agglomeration; Annealing; Atomic layer deposition; Electric variables; FETs; Implants; Leakage current; Silicidation; Silicides; Silicon; Thermal degradation;
Journal_Title :
Electron Devices, IEEE Transactions on
