DocumentCode :
1331127
Title :
A 
- 
Solar-Blind Photodetector Prepared by Furnace Oxidi
Author :
Weng, W.Y. ; Hsueh, T.J. ; Chang, S.J. ; Huang, G.J. ; Hsueh, H.T.
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
Volume :
11
Issue :
4
fYear :
2011
fDate :
4/1/2011 12:00:00 AM
Firstpage :
999
Lastpage :
1003
Abstract :
The authors report the growth of β-Ga2O3 thin film by simple furnace oxidation of GaN thin film and the fabrication of a solar-blind β-Ga2O3 photodetector (PD). For the PD with an active area of 4.4 mm2 and 5-V applied bias, it was found that measured current was only 1.39 × 10-10 A in the dark and increased to 2.03 × 10-5 A when illuminated with 260-nm ultraviolet (UV) light (41.27 μW/cm2). It was also found that the fabricated PD exhibits an extremely large deep-UV-to-visible rejection ratio.
Keywords :
III-V semiconductors; gallium compounds; photodetectors; wide band gap semiconductors; Ga2O3; GaN; deep-UV-to-visible rejection ratio; furnace oxidization; solar-blind photodetector; thin film; $beta$ - $hbox{Ga}_{2} hbox{O} _{3}$ ; GaN; furnace oxidation; ultraviolet (UV) photodetector (PD);
fLanguage :
English
Journal_Title :
Sensors Journal, IEEE
Publisher :
ieee
ISSN :
1530-437X
Type :
jour
DOI :
10.1109/JSEN.2010.2062176
Filename :
5582132
Link To Document :
