• DocumentCode
    1331127
  • Title

    A \\beta - \\hbox {Ga}_{2} \\hbox {O} _{3} Solar-Blind Photodetector Prepared by Furnace Oxidi

  • Author

    Weng, W.Y. ; Hsueh, T.J. ; Chang, S.J. ; Huang, G.J. ; Hsueh, H.T.

  • Author_Institution
    Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
  • Volume
    11
  • Issue
    4
  • fYear
    2011
  • fDate
    4/1/2011 12:00:00 AM
  • Firstpage
    999
  • Lastpage
    1003
  • Abstract
    The authors report the growth of β-Ga2O3 thin film by simple furnace oxidation of GaN thin film and the fabrication of a solar-blind β-Ga2O3 photodetector (PD). For the PD with an active area of 4.4 mm2 and 5-V applied bias, it was found that measured current was only 1.39 × 10-10 A in the dark and increased to 2.03 × 10-5 A when illuminated with 260-nm ultraviolet (UV) light (41.27 μW/cm2). It was also found that the fabricated PD exhibits an extremely large deep-UV-to-visible rejection ratio.
  • Keywords
    III-V semiconductors; gallium compounds; photodetectors; wide band gap semiconductors; Ga2O3; GaN; deep-UV-to-visible rejection ratio; furnace oxidization; solar-blind photodetector; thin film; $beta$- $hbox{Ga}_{2} hbox{O} _{3}$; GaN; furnace oxidation; ultraviolet (UV) photodetector (PD);
  • fLanguage
    English
  • Journal_Title
    Sensors Journal, IEEE
  • Publisher
    ieee
  • ISSN
    1530-437X
  • Type

    jour

  • DOI
    10.1109/JSEN.2010.2062176
  • Filename
    5582132
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1331127