CMOS static RAM chip with high-speed optical read and write

Author

Krishnamoorthy, Ashok V. ; Rozier, R.G. ; Ford, J.E. ; Kiamilev, F.E.

Author_Institution

Lucent Technol., Bell Labs., Holmdel, NJ, USA

Volume

9

Issue

11

fYear

1997

Firstpage

1517

Lastpage

1519

Abstract

We present the first demonstration of a dense VLSI RAM technology with high-speed optical read and optical write capability. The CMOS-based Static-RAM technology is capable of parallel optical access with read/write speeds limited by the native RAM access times. We fabricated a 2/spl times/2 mm optoelectronic-VLSI test chip incorporating 800-b storage and 200 optical I/O based on the hybrid integration of GaAs-AlGaAs MQW modulators on CMOS. Results from the photonic-SRAM test-chip confirm 6.2 ns read and 8-ns write capability.

Keywords

CMOS integrated circuits; III-V semiconductors; SRAM chips; VLSI; aluminium compounds; electro-optical modulation; gallium arsenide; integrated optoelectronics; semiconductor quantum wells; 2/spl times/2 mm optoelectronic-VLSI test chip; 6.2 ns; 8 ns; CMOS static RAM chip; CMOS-based static-RAM technology; GaAs-AlGaAs; GaAs-AlGaAs MQW modulators; dense VLSI RAM technology; high-speed optical reading; high-speed optical writing; hybrid integration; native RAM access times; ns write capability; parallel optical access; photonic-SRAM test-chip; read/write speeds; Bonding; CMOS technology; High speed optical techniques; Integrated circuit technology; Optical buffering; Optical interconnections; Optical modulation; Quantum well devices; Random access memory; Read-write memory;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.634727

Filename

634727