Title :
A new quantum effect model for practical device simulation
Author :
Shigyo, Naoyuki ; Tanimoto, Hiroyoshi
Author_Institution :
Syst. LSI Design Div., Toshiba Corp., Yokohama, Japan
fDate :
5/1/2000 12:00:00 AM
Abstract :
An increase in the complexity of VLSI design, especially in process integration, is leading to increased demands for technology CAD (TCAD). The quantum mechanical (QM) effect becomes very important with an increase in the channel impurity concentration. Several models for the QM effect have been proposed. However, it has been reported that these models had some problems. In this paper, a new QM model for a conventional device simulator is proposed. Applications of this model to NMOS and PMOS including the buried-channel are examined
Keywords :
MOSFET; VLSI; digital simulation; electronic engineering computing; integrated circuit modelling; semiconductor device models; technology CAD (electronics); NMOS devices; PMOS devices; QM effect; TCAD; buried-channel; channel impurity concentration; device simulation; quantum effect model; quantum mechanical effect; technology CAD; Costs; Design automation; Fabrication; Impurities; Interface phenomena; MOS devices; Process design; Quantum mechanics; Semiconductor device modeling; Very large scale integration;
Journal_Title :
Electron Devices, IEEE Transactions on
