A better insight into the performance of silicon BJTs featuring highly nonuniform collector doping profiles

Author

Palestri, Pierpaolo ; Fiegna, Claudio ; Selmi, Luca ; Peter, Michael S. ; Hurkx, G.A.M. ; Slotboom, Jan W. ; Sangiorgi, Enrico

Author_Institution

DIEGM, Udine, Italy

Volume

47

Issue

5

fYear

2000

fDate

5/1/2000 12:00:00 AM

Firstpage

1044

Lastpage

1051

Abstract

This paper investigates the effects of highly nonuniform collector doping profiles on the speed and breakdown performance of silicon bipolar transistors. Monte Carlo and drift diffusion simulation results point out that a thin highly doped layer adjacent to the base collector junction can improve the device cut off frequency without deteriorating significantly the maximum oscillation frequency and the breakdown voltage, provided the voltage drop across this layer is lower than an effective threshold of approximately 1.2 V. Guidelines are given for choosing the doping, position, and thickness of this layer

Keywords

Monte Carlo methods; bipolar transistors; diffusion; doping profiles; elemental semiconductors; impact ionisation; semiconductor device breakdown; semiconductor device models; silicon; BJTs; Monte Carlo simulation; Si; base collector junction; breakdown performance; breakdown voltage; device cut off frequency; drift diffusion simulation; effective threshold; highly doped layer; highly nonuniform collector doping profiles; layer doping; layer thickness; maximum oscillation frequency; speed performance; Bipolar transistors; Breakdown voltage; Cutoff frequency; Doping profiles; Electric breakdown; Impact ionization; Laboratories; Monte Carlo methods; Silicon; Threshold voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.841239

Filename

841239