Title :
Coupled drift-diffusion/quantum transmitting boundary method simulations of thin oxide devices with specific application to a silicon based tunnel switch diode
Author :
Daniel, Erik S. ; Cartoixà, Xavier ; Frensley, William R. ; Ting, David Z Y ; McGill, T.C.
Author_Institution :
Thomas J. Watson Lab. of Appl. Phys., California Inst. of Technol., Pasadena, CA, USA
fDate :
5/1/2000 12:00:00 AM
Abstract :
We present a method of coupling drift-diffusion simulations with quantum transmitting boundary method (QTBM) tunnel current calculations. This allows self-consistent simulation of thin oxide devices in which large tunnel currents can flow. Simulated results are presented for a thin oxide Al/SiO2/Si structure and an Al/SiO2/n-Si/p-Si tunnel switching diode. We demonstrate the careful use of the recombination lifetime as an adjustable or relaxable parameter in order to obtain converging solutions
Keywords :
MIS devices; aluminium; boundary-elements methods; diffusion; electron-hole recombination; elemental semiconductors; semiconductor device models; semiconductor switches; silicon; silicon compounds; tunnel diodes; Al-SiO2-Si; converging solutions; coupled drift-diffusion/quantum transmitting boundary method; recombination lifetime; relaxable parameter; self-consistent simulation; thin oxide devices; tunnel switch diode; Circuit simulation; Computational modeling; Convergence; Nonlinear equations; Power semiconductor switches; Quantum computing; Radiative recombination; Semiconductor diodes; Silicon; Tunneling;
Journal_Title :
Electron Devices, IEEE Transactions on
