Coupled drift-diffusion/quantum transmitting boundary method simulations of thin oxide devices with specific application to a silicon based tunnel switch diode

Author

Daniel, Erik S. ; Cartoixà, Xavier ; Frensley, William R. ; Ting, David Z Y ; McGill, T.C.

Author_Institution

Thomas J. Watson Lab. of Appl. Phys., California Inst. of Technol., Pasadena, CA, USA

Volume

47

Issue

5

fYear

2000

fDate

5/1/2000 12:00:00 AM

Firstpage

1052

Lastpage

1060

Abstract

We present a method of coupling drift-diffusion simulations with quantum transmitting boundary method (QTBM) tunnel current calculations. This allows self-consistent simulation of thin oxide devices in which large tunnel currents can flow. Simulated results are presented for a thin oxide Al/SiO₂/Si structure and an Al/SiO₂/n-Si/p-Si tunnel switching diode. We demonstrate the careful use of the recombination lifetime as an adjustable or relaxable parameter in order to obtain converging solutions

Keywords

MIS devices; aluminium; boundary-elements methods; diffusion; electron-hole recombination; elemental semiconductors; semiconductor device models; semiconductor switches; silicon; silicon compounds; tunnel diodes; Al-SiO₂-Si; converging solutions; coupled drift-diffusion/quantum transmitting boundary method; recombination lifetime; relaxable parameter; self-consistent simulation; thin oxide devices; tunnel switch diode; Circuit simulation; Computational modeling; Convergence; Nonlinear equations; Power semiconductor switches; Quantum computing; Radiative recombination; Semiconductor diodes; Silicon; Tunneling;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.841240

Filename

841240