Title :
Iron-doped InP buried laser heteroepitaxially grown on Si
Author :
Yamada, T. ; Tachikawa, M. ; Sasaki, T. ; Mori, H. ; Kadota, Y. ; Matsumoto, S. ; Kishi, K.
Author_Institution :
NTT Opto-Electron. Labs., Kanagawa, Japan
fDate :
8/15/1996 12:00:00 AM
Abstract :
An iron-doped InP buried DH laser has been successfully grown on Si substrate heteroepitaxially. The threshold current of the buried laser is 28 mA, which is 8 mA less than that of a ridge waveguide laser. The laser has a maximum 3 dB bandwidth of 8 GHz for the frequency response
Keywords :
III-V semiconductors; epitaxial growth; indium compounds; iron; optical fabrication; semiconductor growth; semiconductor lasers; 28 mA; 8 GHz; 8 mA; InP:Fe; InP:Fe semiconductor junction lasers; Iron-doped InP buried laser; Si; bandwidth; buried DH laser; buried laser; frequency response; heteroepitaxially grown; threshold current;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19961051
