Title :
Type II mid-IR lasers operating above room temperature
Author :
Malin, J.I. ; Felix, C.L. ; Meyer, J.R. ; Hoffman, C.A. ; Pinto, J.F. ; Lin, C.-H. ; Chang, P.C. ; Murry, S.J. ; Pei, S.S.
Author_Institution :
Naval Res. Lab., Washington, DC, USA
fDate :
8/15/1996 12:00:00 AM
Abstract :
Laser emission at λ=3.2 μm has been observed for temperatures up to 350 K in pulsed optical pumping experiments on type-II quantum well lasers with four-constituents in each period (InAs-Ga0.7In0.3Sb-InAs-AlSb). The characteristic temperature is 68 K, and peak output powers of up to 270 mW are obtained for ambient-temperature operation
Keywords :
Debye temperature; III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; infrared sources; laser transitions; optical pumping; quantum well lasers; 270 mW; 3.2 mum; 350 K; 68 K; InAs-Ga0.7In0.3Sb-InAs-AlSb; InAs-GaInSb-AlSb; above room temperature; ambient-temperature operation; characteristic temperature; laser emission; peak output powers; pulsed optical pumping experiments; type II mid-IR lasers; type-II quantum well lasers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19961057
