Title :
ZnSe for mirror passivation of high power GaAs based lasers
Author :
Chand, N. ; Hobson, W.S. ; de Jong, J.F. ; Parayanthal, P. ; Chakrabarti, U.K.
Author_Institution :
Bell Labs., Murray Hill, NJ, USA
fDate :
8/15/1996 12:00:00 AM
Abstract :
The authors report a method for passivating vacuum cleaved facets of high power GaAs based lasers using a thin film of ZnSe formed by molecular beam deposition for preventing facet degradation, and thus for improving their long term stability and reliability at high power operation. ZnSe has a large bandgap of 2.7 eV and a lattice constant close to that of GaAs with a lattice mismatch of only 0.23%. ZnSe evaporates congruently at a comparatively low temperature of ~750°C from an effusion cell, and deposits as stoichiometric ZnSe film. The authors have used the technique for 980 nm InGaAs/InGaP/GaAs lasers
Keywords :
III-V semiconductors; gallium arsenide; laser mirrors; laser reliability; laser stability; optical films; passivation; semiconductor lasers; zinc compounds; 750 C; 980 nm; InGaAs-InGaP-GaAs; ZnSe; bandgap; effusion cell; evaporation; high power GaAs laser; lattice constant; lattice mismatch; mirror passivation; molecular beam deposition; reliability; stability; stoichiometric ZnSe thin film; vacuum cleaved facet degradation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19961062
