ZnSe for mirror passivation of high power GaAs based lasers

Author

Chand, N. ; Hobson, W.S. ; de Jong, J.F. ; Parayanthal, P. ; Chakrabarti, U.K.

Author_Institution

Bell Labs., Murray Hill, NJ, USA

Volume

32

Issue

17

fYear

1996

fDate

8/15/1996 12:00:00 AM

Firstpage

1595

Lastpage

1596

Abstract

The authors report a method for passivating vacuum cleaved facets of high power GaAs based lasers using a thin film of ZnSe formed by molecular beam deposition for preventing facet degradation, and thus for improving their long term stability and reliability at high power operation. ZnSe has a large bandgap of 2.7 eV and a lattice constant close to that of GaAs with a lattice mismatch of only 0.23%. ZnSe evaporates congruently at a comparatively low temperature of ~750°C from an effusion cell, and deposits as stoichiometric ZnSe film. The authors have used the technique for 980 nm InGaAs/InGaP/GaAs lasers

Keywords

III-V semiconductors; gallium arsenide; laser mirrors; laser reliability; laser stability; optical films; passivation; semiconductor lasers; zinc compounds; 750 C; 980 nm; InGaAs-InGaP-GaAs; ZnSe; bandgap; effusion cell; evaporation; high power GaAs laser; lattice constant; lattice mismatch; mirror passivation; molecular beam deposition; reliability; stability; stoichiometric ZnSe thin film; vacuum cleaved facet degradation;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19961062

Filename

533314