Title :
Impact ionisation and noise in SiGe multiquantum well structures
Author :
Herbert, D.C. ; Williams, C.J. ; Jaros, M.
Author_Institution :
DRA Electron. Div., Malvern
fDate :
8/15/1996 12:00:00 AM
Abstract :
A modified Keldysh form is proposed for ionisation scattering rates in strained SiGe layers. These rates are incorporated into a hot-carrier calculation to study avalanche noise in SiGe MQW structures. It is found that carrier heating is controlled by the thick Si layers and a pulsing of the ionisation in the SiGe layers acts to reduce the excess noise
Keywords :
Ge-Si alloys; avalanche breakdown; avalanche diodes; hot carriers; impact ionisation; semiconductor device noise; semiconductor materials; semiconductor quantum wells; Keldysh form; SiGe; avalanche noise; carrier heating; excess noise; hot-carrier calculation; impact ionisation; ionisation pulsing; ionisation scattering rates; multiquantum well structures; strained layers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19961035
