Title :
Influence of UV illumination condition on NDR performance of porous silicon superlattice
Author :
Wang, S.J. ; Lin, J.-C. ; Tsai, H.-Y.
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
fDate :
8/15/1996 12:00:00 AM
Abstract :
The authors report on the influence of the UV illumination condition on the negative differential resistance (NDR) performance of a porous silicon superlattice. It is found that the peak-to-valley current ratio (PVCR) can be improved by increasing the off-time of the illumination in each period
Keywords :
characteristics measurement; negative resistance; photoconductivity; porous materials; semiconductor superlattices; NDR performance; Si; UV illumination condition; illumination off-time; negative differential resistance; peak-to-valley current ratio; porous semiconductors; semiconductor superlattices;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19961069
