Title :
Reduction of gate current in AlSb/InAs HEMTs using a dual-gate design
Author :
Boos, J.B. ; Kruppa, W. ; Park, D.
Author_Institution :
Naval Res. Lab., Washington, DC, USA
fDate :
8/15/1996 12:00:00 AM
Abstract :
Dual-gate AlSb/InAs HEMTs with 0.4 μm gate lengths have been fabricated, and exhibit a significant reduction in the gate leakage current associated with holes generated by impact ionisation. These HEMTs also have decreased output conductance and increased low frequency unilateral gain compared to single gate devices
Keywords :
III-V semiconductors; aluminium compounds; high electron mobility transistors; impact ionisation; indium compounds; leakage currents; 0.4 micron; AlSb-InAs; dual-gate HEMT; gate leakage current; hole generation; impact ionisation; low frequency unilateral gain; output conductance;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19961088
