DocumentCode
1331522
Title
Reduction of gate current in AlSb/InAs HEMTs using a dual-gate design
Author
Boos, J.B. ; Kruppa, W. ; Park, D.
Author_Institution
Naval Res. Lab., Washington, DC, USA
Volume
32
Issue
17
fYear
1996
fDate
8/15/1996 12:00:00 AM
Firstpage
1624
Lastpage
1625
Abstract
Dual-gate AlSb/InAs HEMTs with 0.4 μm gate lengths have been fabricated, and exhibit a significant reduction in the gate leakage current associated with holes generated by impact ionisation. These HEMTs also have decreased output conductance and increased low frequency unilateral gain compared to single gate devices
Keywords
III-V semiconductors; aluminium compounds; high electron mobility transistors; impact ionisation; indium compounds; leakage currents; 0.4 micron; AlSb-InAs; dual-gate HEMT; gate leakage current; hole generation; impact ionisation; low frequency unilateral gain; output conductance;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19961088
Filename
533333
Link To Document