Title :
High performance Al/sub 0.35/Ga/sub 0.65/As/GaAs HBT´s
Author :
Welser, R.E. ; Pan, N. ; Lutz, C.R. ; Vu, D.P. ; Zampardi, P.J. ; Pierson, R.L. ; McDermott, B.T.
Author_Institution :
Kopin Corp., Taunton, MA, USA
fDate :
5/1/2000 12:00:00 AM
Abstract :
AlGaAs emitter heterojunction bipolar transistors (HBTs) are demonstrated to have excellent dc and RF properties comparable to InGaP/GaAs HBTs by increasing the Al composition. Al/sub 0.35/Ga/sub 0.65/As/GaAs HBTs exhibit very high dc current gain at all bias levels, exceeding 140 at 25 A/cm2 and reaching a maximum of 210 at 26 kA/cm2 (L=1.4 μm×3 μm, R/sub sb/=330 /spl Omega///spl square/). The temperature dependence of the peak dc current gain is also significantly improved by increasing the AlGaAs mole fraction of the emitter. Device analysis suggests that a larger emitter energy gap contributes to the improved device performance by both lowering space charge recombination and increasing the barrier to reverse hole injection.
Keywords :
III-V semiconductors; aluminium compounds; charge injection; electron-hole recombination; energy gap; gallium arsenide; heterojunction bipolar transistors; high-temperature electronics; microwave bipolar transistors; space charge; thermal stability; 125 C; Al composition; Al/sub 0.35/Ga/sub 0.65/As-GaAs; AlGaAs emitter heterojunction bipolar transistors; AlGaAs mole fraction; Gummel plots; RF properties; dc current gain; emitter energy gap; high performance Al/sub 0.35/Ga/sub 0.65/As/GaAs HBT; peak dc current gain; reverse hole injection barrier; space charge recombination; temperature dependence; temperature stability; Bipolar transistors; Gallium arsenide; Heterojunction bipolar transistors; Performance analysis; Radio frequency; Space charge; Standards development; Temperature dependence; Testing; Voltage;
Journal_Title :
Electron Device Letters, IEEE
