Integration of a superlattice limiter into the HBT emitter for improved operational reliability

Author

Hayes, D.G. ; Higgs, A.W. ; Smith, G.W. ; Birbeck, J.C.H. ; Wilding, P.J.

Author_Institution

Defence Evaluation & Res. Agency, Malvern, UK

Volume

21

Issue

5

fYear

2000

fDate

5/1/2000 12:00:00 AM

Firstpage

203

Lastpage

205

Abstract

A common problem limiting the output power of multiple finger heterojunction bipolar transistors (HBT´s) is nonuniform current flow in the fingers, resulting from an underlying nonuniform temperature distribution. We have fabricated HBT devices containing an integrated superlattice region to help overcome this problem. We demonstrate that the superlattice functions as a temperature-dependent resistive current limiter in a single finger device at dc and RF. Furthermore, the RF performance of the HBT was not compromised by the inclusion of the superlattice structure.

Keywords

III-V semiconductors; current distribution; current limiters; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; microwave bipolar transistors; semiconductor device reliability; semiconductor superlattices; temperature distribution; Al/sub 0.15/Ga/sub 0.85/As-In/sub 0.51/Ga/sub 0.49/P-GaAs; GaAs; HBT emitter; InGaP/GaAs single finger HBT; RF performance; multiple finger heterojunction bipolar transistors; nonuniform current flow; nonuniform temperature distribution; operational reliability; output power; single finger device; superlattice limiter; temperature-dependent resistive current limiter; Current limiters; Diodes; Doping; Electronic ballasts; Fingers; Heterojunction bipolar transistors; Power generation; Radio frequency; Superlattices; Temperature;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.841296

Filename

841296