Frequency multiplier measurements on heterostructure barrier varactors on a copper substrate

Author

Dillner, L. ; Strupinski, W. ; Hollung, S. ; Mann, C. ; Stake, J. ; Beardsley, M. ; Kollberg, E.

Author_Institution

Microwave Electron. Lab., Chalmers Univ. of Technol., Goteborg, Sweden

Volume

21

Issue

5

fYear

2000

fDate

5/1/2000 12:00:00 AM

Firstpage

206

Lastpage

208

Abstract

We have fabricated heterostructure barrier varactors (HBV) on a copper substrate, which offers reduced spreading resistance, and improved thermal conductivity compared to an InP substrate. The devices are fabricated without degrading the electrical characteristics. The three-barrier HBV material grown by MOVPE has a leakage current of only 0.1 μA/μm² at 19 V. The maximum capacitance is 0.54 fF/μm². In a frequency tripler experiment a maximum output power of 7.1 mW was generated at 221 GHz with a flange-to-flange efficiency of 7.9%.

Keywords

MOCVD; capacitance; copper; frequency multipliers; gallium arsenide; indium compounds; leakage currents; millimetre wave diodes; millimetre wave frequency convertors; vapour phase epitaxial growth; varactors; 19 V; 221 GHz; 7.1 mW; 7.9 percent; Cu; Cu substrate; In/sub 0.53/Ga/sub 0.47/As-InP; InGaAs/InP heterostructure barrier varactors; MOVPE; electrical characteristics; flange-to-flange efficiency; frequency multiplier measurements; frequency tripler; leakage current; maximum capacitance; maximum output power; mm-wave frequency multiplier; spreading resistance; thermal conductivity; three-barrier HBV material; Copper; Electric resistance; Electrical resistance measurement; Frequency measurement; Indium phosphide; Power generation; Thermal conductivity; Thermal degradation; Thermal resistance; Varactors;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.841297

Filename

841297