Title :
A simple and reliable wafer-level electrical probing technique for III-nitride light-emitting epitaxial structures
Author :
Zhao, Y.S. ; Jensen, C.L. ; Chuang, R.W. ; Lee, H.P. ; Dong, Z.J. ; Shih, R.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Irvine, CA, USA
fDate :
5/1/2000 12:00:00 AM
Abstract :
We report an easy-to-implement wafer-level electroluminescence characterization technique for InGaN/GaN light-emitting diodes (LED´s) epi-wafers by means of multiple electrical probes. By first damaging the p-n junctions of the LED epilayer at localized spots, diode-like current versus voltage characteristics and emission spectra can be obtained at injection currents as high as 100 mA. This allows a relative but reliable comparison of device-related parameters such as differential quantum efficiency, leakage current, and series resistance among LED epi-wafers.
Keywords :
III-V semiconductors; electroluminescence; gallium compounds; indium compounds; leakage currents; light emitting diodes; probes; semiconductor device breakdown; semiconductor device reliability; semiconductor device testing; semiconductor epitaxial layers; semiconductor quantum wells; wide band gap semiconductors; 100 mA; III-nitride; InGaN-GaN; InGaN/GaN LED epi-wafers; SQW LED; breakdown voltage; dead current; differential quantum efficiency; diode-like current versus voltage characteristics; emission spectra; injection current; leakage current; light-emitting epitaxial structures; localized damage; multiple electrical probes; p-n junctions; reliable comparison; series resistance; wafer-level electrical probing technique; wafer-level electroluminescence characterization; Electric resistance; Electrical resistance measurement; Electroluminescence; Gallium nitride; Leakage current; Light emitting diodes; Optical sensors; Probes; Stimulated emission; Voltage;
Journal_Title :
Electron Device Letters, IEEE
