• DocumentCode
    1331637
  • Title

    Tunable Long Wavelength ( \\sim 2.8 \\mu m) GaInAsSb–GaSb Quantum-Well Binary Superimposed

  • Author

    Lehnhardt, Thomas ; Höfling, Sven ; Kamp, Martin ; Worschech, Lukas ; Forchel, Alfred

  • Author_Institution
    Wilhelm-Conrad-Rontgen-Res. Center for Complex Mater. Syst., Univ. of Wurzburg, Wurzburg, Germany
  • Volume
    22
  • Issue
    22
  • fYear
    2010
  • Firstpage
    1662
  • Lastpage
    1664
  • Abstract
    GaInAsSb-GaSb quantum-well diode lasers emitting around 2.80 μm with a single device tuning range of 60 nm are presented. This was achieved by the implementation of binary superimposed metal gratings. The lasers work at room temperature in continuous-wave mode and show tunable single-mode emission with a sidemode suppression ratio of more than 30 dB. The optical output power of more than 1 mW makes them suitable for gas sensing.
  • Keywords
    III-V semiconductors; diffraction gratings; gallium arsenide; gallium compounds; gas sensors; indium compounds; integrated optics; laser modes; laser tuning; optical sensors; quantum well lasers; GaInAsSb-GaSb; binary superimposed metal gratings; continuous-wave mode; gas sensing; quantum-well diode lasers; sidemode suppression ratio; tunable single-mode emission; Gas lasers; Gratings; Laser applications; Laser modes; Laser tuning; Antimonide-based lasers; GaInAsSb; binary superimposed grating; continuous-wave (CW) operation; gas sensing; midinfrared lasers; quantum-well lasers; semiconductor lasers;
  • fLanguage
    English
  • Journal_Title
    Photonics Technology Letters, IEEE
  • Publisher
    ieee
  • ISSN
    1041-1135
  • Type

    jour

  • DOI
    10.1109/LPT.2010.2078495
  • Filename
    5582206