DocumentCode :
1331637
Title :
Tunable Long Wavelength ( 
2.8 
m) GaInAsSb–GaSb Quantum-Well Binary Superimposed
Author :
Lehnhardt, Thomas ; Höfling, Sven ; Kamp, Martin ; Worschech, Lukas ; Forchel, Alfred
Author_Institution :
Wilhelm-Conrad-Rontgen-Res. Center for Complex Mater. Syst., Univ. of Wurzburg, Wurzburg, Germany
Volume :
22
Issue :
22
fYear :
2010
Firstpage :
1662
Lastpage :
1664
Abstract :
GaInAsSb-GaSb quantum-well diode lasers emitting around 2.80 μm with a single device tuning range of 60 nm are presented. This was achieved by the implementation of binary superimposed metal gratings. The lasers work at room temperature in continuous-wave mode and show tunable single-mode emission with a sidemode suppression ratio of more than 30 dB. The optical output power of more than 1 mW makes them suitable for gas sensing.
Keywords :
III-V semiconductors; diffraction gratings; gallium arsenide; gallium compounds; gas sensors; indium compounds; integrated optics; laser modes; laser tuning; optical sensors; quantum well lasers; GaInAsSb-GaSb; binary superimposed metal gratings; continuous-wave mode; gas sensing; quantum-well diode lasers; sidemode suppression ratio; tunable single-mode emission; Gas lasers; Gratings; Laser applications; Laser modes; Laser tuning; Antimonide-based lasers; GaInAsSb; binary superimposed grating; continuous-wave (CW) operation; gas sensing; midinfrared lasers; quantum-well lasers; semiconductor lasers;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/LPT.2010.2078495
Filename :
5582206
Link To Document :
