Title :
Electron and hole mobility enhancement in strained-Si MOSFET´s on SiGe-on-insulator substrates fabricated by SIMOX technology
Author :
Mizuno, T. ; Takagi, S. ; Sugiyama, N. ; Satake, H. ; Kurobe, A. ; Toriumi, A.
Author_Institution :
Adv. LSI Technol. Lab., Toshiba Corp., Yokohama, Japan
fDate :
5/1/2000 12:00:00 AM
Abstract :
We have newly developed strained-Si MOSFET´s on a SiGe-on-insulator (strained-SOI) structure fabricated by separation-by-implanted-oxygen (SIMOX) technology. Their electron and hole mobility characteristics have been experimentally studied and compared to those of control SOI MOSFET´s. Using an epitaxial regrowth technique of a strained-Si film on a relaxed-Si/sub 0.9/Ge/sub 0.1/ layer and the conventional SIMOX process, strained-Si (20 nm thickness) layer on fully relaxed-SiGe (340 nm thickness)-on-buried oxide (100 nm thickness) was formed, and n-and p-channel strained-Si MOSFET´s were successfully fabricated. For the first time, the good FET characteristics were obtained in both n-and p-strained-SOI devices. It was found that both electron and hole mobilities in strained-SOI MOSFET´s were enhanced, compared to those of control SOI MOSFET´s and the universal mobility in Si inversion layer.
Keywords :
Ge-Si alloys; MOSFET; SIMOX; buried layers; electron mobility; hole mobility; inversion layers; 100 nm; 20 nm; 340 nm; SIMOX technology; Si inversion layer; Si-Si/sub 0.9/Ge/sub 0.1/-SiO/sub 2/; SiGe-on-insulator substrates; buried oxide; electron mobility enhancement; epitaxial regrowth technique; hole mobility enhancement; n-channel MOSFET; n-strained-SOI devices; p-channel MOSFET; p-strained-SOI devices; relaxed-Si/sub 0.9/Ge/sub 0.1/ layer; strained-Si MOSFET; strained-Si film; Charge carrier processes; Effective mass; Electron mobility; FETs; Fabrication; Germanium silicon alloys; MOSFET circuits; Silicon germanium; Strain control; Substrates;
Journal_Title :
Electron Device Letters, IEEE
