DocumentCode
1331673
Title
Deep submicrometer SOI MOSFET drain current model including series resistance, self-heating and velocity overshoot effects
Author
Roldán, J.B. ; Gámiz, F. ; López-Villanueva, J.A. ; Cartujo-Cassinello, P.
Author_Institution
Dept. de Electron. y Tecnologia de Computadores, Granada Univ., Spain
Volume
21
Issue
5
fYear
2000
fDate
5/1/2000 12:00:00 AM
Firstpage
239
Lastpage
241
Abstract
We have developed a new analytical ultrashort channel SOI MOSFET for circuit simulation where the effects of series resistance, self-heating and velocity overshoot are included. We have reproduced experimental measurements validating our model. Its simplicity allowed us to study the contribution of each effect separately in an easy way.
Keywords
MOSFET; circuit simulation; semiconductor device models; silicon-on-insulator; analytical ultrashort channel SOI MOSFET; circuit simulation; deep submicrometer SOI MOSFET; drain current model; self-heating; series resistance; velocity overshoot effects; Circuit simulation; Electrical resistance measurement; Insulation; MOSFET circuits; Parasitic capacitance; Semiconductor films; Silicon on insulator technology; Thermal conductivity; Threshold voltage; Very large scale integration;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/55.841308
Filename
841308
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