• DocumentCode
    1331877
  • Title

    Solid source molecular beam epitaxy of low threshold strained layer 1.3 μm InAsP/GaInAsP lasers

  • Author

    Wamsley, C.C. ; Koch, M.W. ; Wicks, G.W.

  • Volume
    32
  • Issue
    18
  • fYear
    1996
  • fDate
    8/29/1996 12:00:00 AM
  • Firstpage
    1674
  • Abstract
    A threshold current density of 270 A/cm2 has been achieved for 2 mm long broad area lasers grown by solid source molecular beam epitaxy. These are the lowest reported threshold current density 1.3 μm lasers by any type of MBE growth technique
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; molecular beam epitaxial growth; quantum well lasers; semiconductor epitaxial layers; semiconductor growth; 1.3 micrometre; 2 mm; InAsP-GaInAsP; MQW lasers; broad area lasers; solid source molecular beam epitaxy; strained layer lasers; threshold current density;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19961090
  • Filename
    533378
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1331877