DocumentCode :
133196
Title :
Realistic models of quantum-dot heterostructures
Author :
Barettin, D. ; Auf der Maur, M. ; Pecchia, Antonio ; Di Carlo, A.
Author_Institution :
Dept. of Electron. Eng., Univ. of Rome Tor Vergata, Rome, Italy
fYear :
2014
fDate :
1-4 Sept. 2014
Firstpage :
3
Lastpage :
4
Abstract :
Different numerical simulations of quantum-dot heterostructures derived from experimental results are presented. We extrapolated three-dimensional dot models directly by atomic force microscopy and high-resolution transmission electron microscopy results, and we present electromechanical, continuum k⃗ · p⃗, atomistic Tight Binding and optical calculations for these realistic structures, also compared with benchmark calculations with ideal structures largely applied in the literature. According our results, the use of more realistic structures can provide significant improvements into the modeling and the understanding of quantum-dot nanostructures.
Keywords :
atomic force microscopy; extrapolation; nanophotonics; semiconductor quantum dots; tight-binding calculations; transmission electron microscopy; atomic force microscopy; atomistic tight binding calculations; continuum k⃗ · p⃗ calculations; electromechanical calculations; extrapolation; high-resolution transmission electron microscopy; optical calculations; quantum-dot heterostructures; quantum-dot nanostructures; three-dimensional dot models; Geometry; Indium phosphide; Microscopy; Numerical models; Quantum dots; Shape; Strain;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Numerical Simulation of Optoelectronic Devices (NUSOD), 2014 14th International Conference on
Conference_Location :
Palma de Mallorca
ISSN :
2158-3234
Print_ISBN :
978-1-4799-3681-6
Type :
conf
DOI :
10.1109/NUSOD.2014.6935327
Filename :
6935327
Link To Document :
بازگشت