Title :
DC electroluminescence from PECVD grown thin films of silicon-rich silica
Author :
Trwoga, P.F. ; Kenyon, A.J. ; Pitt, C.W.
fDate :
8/29/1996 12:00:00 AM
Abstract :
The authors report the fabrication of an electroluminescent MOS device using microclustered silicon in silica as the active layer. A DC electroluminescence spectrum is shown and compared with photoluminescence from the same material. A current-voltage curve is presented which shows weak rectifying behaviour and is consistent with a space-charge limited structure with a high resistivity layer
Keywords :
MIS devices; electroluminescence; electroluminescent devices; insulating thin films; plasma CVD coatings; silicon compounds; space-charge limited devices; Au-SiO-Si; DC electroluminescence; I-V curve; PECVD grown thin films; Si-rich silica; SiOx films; current-voltage curve; electroluminescence spectrum; electroluminescent MOS device; fabrication; high resistivity layer; microclustered Si; photoluminescence; space-charge limited structure; weak rectifying behaviour;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19961122
