Title :
Monolithic 10 channel 10 Gbit/s amplifier array using 0.3 μm AlGaAs/GaAs-HEMTs
Author :
Lao, Z. ; Berroth, Manfred ; Hurm, V. ; Ludwig, Michael ; Bronner, W. ; Schneider, Jurgen
Author_Institution :
Fraunhofer-Inst. of Appl. Solid-State Phys., Freiburg
fDate :
8/29/1996 12:00:00 AM
Abstract :
A monolithic 10 channel limiting amplifier for high speed optical fibre communication systems based on 0.3 μm gate length enhancement and depletion AlGaAs/GaAs HEMTs (fT=50/45 GHz) has been fabricated. Each channel has a small signal differential gain of 35 dB and a bandwidth of 8.5 GHz; the amplifier array operates reliably up to 10 Gbit/s. The differential output voltages are limited to 1.2 VP-P . The power consumption is 2.5 W at a single supply voltage of -5 V
Keywords :
HEMT integrated circuits; III-V semiconductors; aluminium compounds; differential amplifiers; digital communication; gallium arsenide; optical communication equipment; wideband amplifiers; -5 V; 0.3 micron; 10 Gbit/s; 10 channel amplifier array; 2.5 W; 35 dB; 45 GHz; 50 GHz; 8.5 GHz; AlGaAs-GaAs; AlGaAs/GaAs HEMTs; depletion type; enhancement type; high speed optical fibre communication; monolithic limiting amplifier; single supply voltage;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19961105
