Title :
0-40 GHz GaAs MESFET 1:2 distributed signal distributor IC
Author :
Kimura, Shunji ; Imai, Yuki
Author_Institution :
NTT LSI Labs., Atsugi
fDate :
8/29/1996 12:00:00 AM
Abstract :
The authors describe a GaAs MESFET 1:2 signal distributor with a new distributed configuration. A key feature of the design is alternately distributed sections that have a common gate line. The 1:2 signal distributor IC has a gain of ~1.3 dB and a bandwidth of ~40 GHz. This is the widest bandwidth amongst all reported GaAs MESFET signal distributor ICs
Keywords :
III-V semiconductors; MESFET integrated circuits; field effect MMIC; gallium arsenide; optical communication equipment; 0 to 40 GHz; 1.3 dB; 40 GHz; 40 Gbit/s; GaAs; GaAs MESFET IC; common gate line; distributed signal distributor IC;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19961130
