Title :
0.98 μm multiquantum well tunnelling injection lasers with ultra-high modulation bandwidths
Author :
Zhang, Xiaobing ; Gutierrez-Aitken, A.L. ; Klotzkin, David ; Bhattacharya, Pallab ; Caneau, Catherine ; Bhat, Ritesh
Author_Institution :
Solid State Electron. Lab., Michigan Univ., Ann Arbor, MI
fDate :
8/29/1996 12:00:00 AM
Abstract :
GaAs-based 0.98 μm multiquantum well tunnelling injection lasers grown by MOVPE have been designed and fabricated. 200 μm long singlemode ridge lasers are characterised by Ith=3 mA, f-3 dB=45 GHz, f-3 dB (measured)=43 GHz, and f-3 dB(max)=84 GHz for pulsed operation. For CW operation the corresponding modulation bandwidths are 43 and 76 GHz, respectively
Keywords :
III-V semiconductors; gallium arsenide; laser transitions; optical modulation; quantum well lasers; ridge waveguides; vapour phase epitaxial growth; waveguide lasers; 0.98 micron; 200 micron; 3 mA; 43 GHz; 43 to 84 GHz; 76 GHz; CW operation; GaAs; GaAs-based MQW lasers; MOVPE growth; MQW tunnelling injection lasers; multiquantum well lasers; pulsed operation; ridge waveguide lasers; singlemode ridge lasers; ultra-high modulation bandwidths;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19961156
