Title :
Trap-assisted tunneling in InGaN/GaN LEDs: Experiments and physics-based simulation
Author :
Mandurrino, M. ; Verzellesi, G. ; Goano, Michele ; Vallone, M.E. ; Bertazzi, Francesco ; Ghione, G. ; Meneghini, Matteo ; Meneghesso, Gaudenzio ; Zanoni, Enrico
Author_Institution :
Dipt. di Elettron. e Telecomun., Politec. di Torino, Turino, Italy
Abstract :
We present results from a combined experimental and numerical investigation of a blue InGaN/GaN LED test structure grown on a SiC substrate, confirming that tunneling represents a critical contribution to the sub-threshold forward-bias current and discussing the relative importance of different trap-assisted electron tunneling processes.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; light emitting diodes; radiation pressure; semiconductor device models; semiconductor device testing; silicon compounds; wide band gap semiconductors; InGaN-GaN; LED; SiC; physics-based simulation; trap-assisted tunneling; Electron traps; Gallium nitride; Light emitting diodes; Reliability; Silicon carbide; Substrates; Tunneling;
Conference_Titel :
Numerical Simulation of Optoelectronic Devices (NUSOD), 2014 14th International Conference on
Conference_Location :
Palma de Mallorca
Print_ISBN :
978-1-4799-3681-6
DOI :
10.1109/NUSOD.2014.6935332
