Title :
20 GHz bandwidth monolithic optoelectronic receiver based on SSMBE-grown InP HBT technology
Author :
Westergren, U. ; Willén, B. ; Asonen, H.
fDate :
8/29/1996 12:00:00 AM
Abstract :
A monolithic optoelectronic receiver with a bandwidth of more than 20 GHz and a transimpedance of 300 Ω has been designed and fabricated in InP HBT technology. The results demonstrate the possibility of producing a compact component with a single power supply voltage for conversion of modulated light into electric signals with a bandwidth that may be large enough for 40 Gbit/s transmission
Keywords :
III-V semiconductors; bipolar analogue integrated circuits; heterojunction bipolar transistors; indium compounds; integrated optoelectronics; molecular beam epitaxial growth; optical receivers; photodetectors; 20 GHz; 40 Gbit/s; InP; InP HBT technology; MBE; SSMBE-grown InP; compact component; monolithic optoelectronic receiver; single power supply voltage;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19961163
