Title :
AlGaAs/InGaAs/GaAs heterostructure-emitter and heterostructure-base transistor (HEHBT)
Author :
Tsai, Jung-Hui ; Cheng, Shiou-Ying ; Laih, Lih-Wen ; Liu, Wen-Chau
fDate :
8/29/1996 12:00:00 AM
Abstract :
A new AlGaAs/InGaAs/GaAs heterostructure-emitter and heterostructure-base transistor (HEHBT) has been fabricated and demonstrated. Owing to the presence of the InGaAs/GaAs heterostructure base, a quantum well is formed between the emitter-base (E-B) junction. This may enhance the E-B valence band discontinuity (ΔEV) and the confinement effect of minority carriers (holes) in the base region. Thus the emitter injection efficiency can be improved. A high current gain of 280 and an offset voltage lower than 100 mV are obtained if the base metal is deposited on the InGaAs base layer
Keywords :
III-V semiconductors; aluminium compounds; bipolar transistors; gallium arsenide; indium compounds; minority carriers; semiconductor quantum wells; valence bands; 100 mV; AlGaAs-InGaAs-GaAs; HEHBT; confinement effect; emitter injection efficiency; heterostructure-base; heterostructure-emitter; high current gain; minority carriers; offset voltage; quantum well; valence band discontinuity;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19961096
