Minimizing the influence of surface potentials in axial InxGa1−xN/GaN nanowire heterostructures by reducing their diameter

Simulations using continuum elasticity theory and an eight-band k · p approach suggest the reduction of the diameter of In_xGa_1-xN/GaN axial nanowire heterostructures to be a promising approach to increase the intensity of light emitting processes. A reduction of the nanowire diameter significantly reduces the magnitude of surface potentials and thus leads to a much larger overlap of the electron and hole charge densities.