Title :
High power top-surface emitting oxide confined vertical-cavity laser diodes
Author :
Grabherr, M. ; Weigl, B. ; Reiner, G. ; Michalzik, R. ; Miller, M. ; Ebeling, K.J.
fDate :
8/29/1996 12:00:00 AM
Abstract :
Large area MBE grown vertical-cavity surface emitting laser diodes (VCSELs) for high power emission at ~980 nm wavelength have been fabricated. Top emitting devices of 146 μm active diameter deliver 160 mW at 20% wallplug efficiency and 180 mW maximum output power in a junction-up configuration
Keywords :
molecular beam epitaxial growth; semiconductor growth; semiconductor lasers; surface emitting lasers; 146 micron; 160 mW; 180 mW; 20 percent; 980 nm; MBE; VCSELs; active diameter; junction-up configuration; maximum output power; oxide confined devices; power emission; top-surface emitting devices; vertical-cavity laser diodes; wallplug efficiency;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19961155
