DocumentCode :
1332098
Title :
Hydrogenation of GaAs MISFETs with Al2O3 as the gate insulator
Author :
Parikh, P.A. ; Shi, S.S. ; Hu, E.L. ; Mishra, Umesh K.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA
Volume :
32
Issue :
18
fYear :
1996
fDate :
8/29/1996 12:00:00 AM
Firstpage :
1724
Abstract :
A GaAs MISFET with Al2O3 formed by the wet oxidation of AlAs as the gate oxide is reported. It is observed that hydrogenation treatment proves to be effective in reducing the state density at the Al2O3/GaAs interface due to removal of excess arsenic, which is a possible cause of interface states in this system
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19961158
Filename :
533411
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1332098
بازگشت