• DocumentCode
    1332098
  • Title

    Hydrogenation of GaAs MISFETs with Al2O3 as the gate insulator

  • Author

    Parikh, P.A. ; Shi, S.S. ; Hu, E.L. ; Mishra, Umesh K.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA
  • Volume
    32
  • Issue
    18
  • fYear
    1996
  • fDate
    8/29/1996 12:00:00 AM
  • Firstpage
    1724
  • Abstract
    A GaAs MISFET with Al2O3 formed by the wet oxidation of AlAs as the gate oxide is reported. It is observed that hydrogenation treatment proves to be effective in reducing the state density at the Al2O3/GaAs interface due to removal of excess arsenic, which is a possible cause of interface states in this system
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19961158
  • Filename
    533411
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1332098