Title :
Shallow and low-resistive contacts to p-In0.53Ga0.47As based on Pd/Sb and Pd/Ge metallisations
Author :
Ressel, P. ; Park, M.H. ; Wang, L.C. ; Kuphal, E.
fDate :
8/29/1996 12:00:00 AM
Abstract :
Ohmic contacts on moderately doped In0.53Ga0.47 As (p=4× 1018 cm3) have been prepared using Pd/Zn/Sb/Pd and Pd/Zn/Pd/Ge metallisations. Low contact resistivities have been achieved, i.e. 3-7×10-7 Ω cm2. These Au free metallisations exhibit superior surface and interface morphology, with reaction depths well below 50 nm
Keywords :
III-V semiconductors; antimony; contact resistance; gallium arsenide; germanium; indium compounds; integrated circuit metallisation; ohmic contacts; palladium; zinc; Pd-Zn-Pd-Ge-In0.53Ga0.47As; Pd-Zn-Sb-Pd-In0.53Ga0.47As; contact resistivities; interface morphology; low-resistive contacts; ohmic contacts; reaction depths; shallow contacts; surface morphology;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19961093
