• DocumentCode
    1332136
  • Title

    Shallow and low-resistive contacts to p-In0.53Ga0.47As based on Pd/Sb and Pd/Ge metallisations

  • Author

    Ressel, P. ; Park, M.H. ; Wang, L.C. ; Kuphal, E.

  • Volume
    32
  • Issue
    18
  • fYear
    1996
  • fDate
    8/29/1996 12:00:00 AM
  • Firstpage
    1734
  • Abstract
    Ohmic contacts on moderately doped In0.53Ga0.47 As (p=4× 1018 cm3) have been prepared using Pd/Zn/Sb/Pd and Pd/Zn/Pd/Ge metallisations. Low contact resistivities have been achieved, i.e. 3-7×10-7 Ω cm2. These Au free metallisations exhibit superior surface and interface morphology, with reaction depths well below 50 nm
  • Keywords
    III-V semiconductors; antimony; contact resistance; gallium arsenide; germanium; indium compounds; integrated circuit metallisation; ohmic contacts; palladium; zinc; Pd-Zn-Pd-Ge-In0.53Ga0.47As; Pd-Zn-Sb-Pd-In0.53Ga0.47As; contact resistivities; interface morphology; low-resistive contacts; ohmic contacts; reaction depths; shallow contacts; surface morphology;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19961093
  • Filename
    533417
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1332136