Title :
Electrical characteristics simulation of GaAs-based blocked-impurity-band detector for THz application
Author :
Xiaodong Wang ; Bingbing Wang ; Liwei Hou ; Wei Xie ; Xiaoyao Chen ; Ming Pan
Author_Institution :
No. 50 Res. Inst., China Electron. Technol. Group Corp., Shanghai, China
Abstract :
Electrical characteristics of GaAs-based blocked-impurity-band (BIB) detector are numerically studied. Electron density and electric field distributions of the device are presented with consideration of immaturity of GaAs blocking layer. Temperature-dependent dark current characteristics are then simulated by taking into account impurity-band effects.
Keywords :
III-V semiconductors; dark conductivity; electron density; gallium arsenide; impurities; microwave photonics; terahertz wave detectors; GaAs; GaAs blocking layer; THz application; blocked impurity band detector; electric field distributions; electrical characteristics simulation; electron density; impurity-band effects; temperature-dependent dark current characteristics; Dark current; Detectors; Gallium arsenide; Impurities; Mathematical model; Numerical models;
Conference_Titel :
Numerical Simulation of Optoelectronic Devices (NUSOD), 2014 14th International Conference on
Conference_Location :
Palma de Mallorca
Print_ISBN :
978-1-4799-3681-6
DOI :
10.1109/NUSOD.2014.6935340
