DocumentCode
1332251
Title
Corner Effect and Local Volume Inversion in SiNW FETs
Author
De Michielis, Luca ; Moselund, Kirsten E. ; Selmi, Luca ; Ionescu, Adrian M.
Author_Institution
Nanoelectronic Devices Lab., Ecole Polytech. Fed. de Lausanne, Lausanne, Switzerland
Volume
10
Issue
4
fYear
2011
fDate
7/1/2011 12:00:00 AM
Firstpage
810
Lastpage
816
Abstract
In this paper, a quantitative study of the corner effect and of the local volume inversion on gate-all-around MOSFETs based on numerical simulations has been carried out; different angles and doping levels are compared, in order to understand the impact of the corner regions on the total current. A method for the extraction of the threshold voltage and of the subthreshold slope of the corner region has been proposed, and the resulting values have been analyzed in order to understand their effects on the device characteristics.
Keywords
MOSFET; doping profiles; elemental semiconductors; nanowires; semiconductor doping; silicon; MOSFET; NW; Si; corner effect; doping levels; local volume inversion; subthreshold slope; threshold voltage; Doping; Logic gates; MOSFETs; Nanotechnology; Semiconductor process modeling; Silicon; Threshold voltage; Corner effect; local volume inversion; multigate MOSFET; silicon nanowire (SiNW);
fLanguage
English
Journal_Title
Nanotechnology, IEEE Transactions on
Publisher
ieee
ISSN
1536-125X
Type
jour
DOI
10.1109/TNANO.2010.2080284
Filename
5582294
Link To Document