Title :
Photoresponse simulation for separate absorption and multiplication GaN/AlGaN avalanche photodiode
Author :
Xiaodong Wang ; Bingbing Wang ; Liwei Hou ; Wei Xie ; Xiaoyao Chen ; Ming Pan
Author_Institution :
No. 50 Res. Inst., China Electron. Technol. Group Corp., Shanghai, China
Abstract :
We present the detailed procedure for modeling of separate absorption and multiplication (SAM) GaN/AlGaN avalanche photodiode (APD). The bias-dependent spectral responsivity characteristics are obtained by using the constructed two-dimensional numerical model. It is found that the spectral responsivities with wavelength from 240 to 450nm are entirely increased with the increased bias.
Keywords :
III-V semiconductors; aluminium compounds; avalanche photodiodes; gallium compounds; wide band gap semiconductors; GaN-AlGaN; SAM APD; bias-dependent spectral responsivity; photoresponse simulation; separate absorption-multiplication avalanche photodiode; two-dimensional numerical model; wavelength 240 nm to 450 nm; Absorption; Aluminum gallium nitride; Avalanche photodiodes; Fitting; Gallium nitride; Mathematical model; Numerical models;
Conference_Titel :
Numerical Simulation of Optoelectronic Devices (NUSOD), 2014 14th International Conference on
Conference_Location :
Palma de Mallorca
Print_ISBN :
978-1-4799-3681-6
DOI :
10.1109/NUSOD.2014.6935341
