• DocumentCode
    1332266
  • Title

    Statistical Compact Model Extraction: A Neural Network Approach

  • Author

    Viraraghavan, Janakiraman ; Pandharpure, Shrinivas J. ; Watts, Josef

  • Author_Institution
    Semicond. R&D Center, IBM India Pvt. Ltd., Bangalore, India
  • Volume
    31
  • Issue
    12
  • fYear
    2012
  • Firstpage
    1920
  • Lastpage
    1924
  • Abstract
    A technique for extracting statistical compact model parameters using artificial neural networks (ANNs) is proposed. ANNs can model a much higher degree of nonlinearity compared to existing quadratic polynomial models and, hence, can even be used in sub-100-nm technologies to model leakage current that exponentially depends on process parameters. Existing techniques cannot be extended to handle such exponential functions. Additionally, ANNs can handle multiple input multiple output relations very effectively. The concept applied to CMOS devices improves the efficiency and accuracy of model extraction. Results from the ANN match the ones obtained from SPICE simulators within 1%.
  • Keywords
    CMOS integrated circuits; integrated circuit modelling; leakage currents; neural nets; polynomial approximation; CMOS devices; SPICE simulators; artificial neural networks; exponential functions; leakage current; multiple input multiple output relations; quadratic polynomial models; statistical compact model extraction; statistical compact model parameters; Artificial neural networks; Backpropagation; Modeling; Statistical analysis; Backward propagation of variance (BPV); compact model; extraction; neural; statistical;
  • fLanguage
    English
  • Journal_Title
    Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0278-0070
  • Type

    jour

  • DOI
    10.1109/TCAD.2012.2207955
  • Filename
    6349439