DocumentCode
1332266
Title
Statistical Compact Model Extraction: A Neural Network Approach
Author
Viraraghavan, Janakiraman ; Pandharpure, Shrinivas J. ; Watts, Josef
Author_Institution
Semicond. R&D Center, IBM India Pvt. Ltd., Bangalore, India
Volume
31
Issue
12
fYear
2012
Firstpage
1920
Lastpage
1924
Abstract
A technique for extracting statistical compact model parameters using artificial neural networks (ANNs) is proposed. ANNs can model a much higher degree of nonlinearity compared to existing quadratic polynomial models and, hence, can even be used in sub-100-nm technologies to model leakage current that exponentially depends on process parameters. Existing techniques cannot be extended to handle such exponential functions. Additionally, ANNs can handle multiple input multiple output relations very effectively. The concept applied to CMOS devices improves the efficiency and accuracy of model extraction. Results from the ANN match the ones obtained from SPICE simulators within 1%.
Keywords
CMOS integrated circuits; integrated circuit modelling; leakage currents; neural nets; polynomial approximation; CMOS devices; SPICE simulators; artificial neural networks; exponential functions; leakage current; multiple input multiple output relations; quadratic polynomial models; statistical compact model extraction; statistical compact model parameters; Artificial neural networks; Backpropagation; Modeling; Statistical analysis; Backward propagation of variance (BPV); compact model; extraction; neural; statistical;
fLanguage
English
Journal_Title
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
Publisher
ieee
ISSN
0278-0070
Type
jour
DOI
10.1109/TCAD.2012.2207955
Filename
6349439
Link To Document