Title :
The photoelectric conversion behavior of GaAs/InGaAs/InAs quantum dots-in-well in double barrier
Author :
Wang, W.W. ; Ding, Lixin ; Guo, F.M.
Author_Institution :
Lab. of Polar Mater. & Devices, East China Normal Univ., Shanghai, China
Abstract :
A GaAs/InGaAs/InAs quantum dots - quantum well in double barrier is discussed in this paper, because it has shown a specific inner multiplication in test and lower dark current accompanied by high current gains. The S (signal)/D (dark current) has reached 106 at a certain light power and bias. For further know its electronic transport and photoelectric characteristic, we are contrastive analysis sensitivity and dark current of quantum dots and quantum well in double barrier respectively, and interrelation under different illumination intensity respectively.
Keywords :
III-V semiconductors; dark conductivity; gallium arsenide; indium compounds; photoconductivity; semiconductor quantum dots; semiconductor quantum wells; GaAs-InGaAs-InAs; dark current; double barrier; double barrier model; electronic transport; illumination intensity; photoelectric conversion; quantum dots-in-well; Dark current; Gallium arsenide; Indium gallium arsenide; Photoconductivity; Photodetectors; Quantum dots;
Conference_Titel :
Numerical Simulation of Optoelectronic Devices (NUSOD), 2014 14th International Conference on
Conference_Location :
Palma de Mallorca
Print_ISBN :
978-1-4799-3681-6
DOI :
10.1109/NUSOD.2014.6935344
