Limits of Discretization in Computational Micromagnetics

Author

Sumei Wang ; Dan Wei ; Kai-Zhong Gao

Author_Institution

Dept. of Mater. Sci. & Eng., Tsinghua Univ., Beijing, China

Volume

47

Issue

10

fYear

2011

Firstpage

3813

Lastpage

3816

Abstract

The limits of discretization for reliable micromagnetic simulation are analyzed in square magnetic thin film devices. First the device is discretized by cubic cells, and an upper limit is found for the ratio of the cell size to the Neel exchange length. This upper limit increases with thinner film and larger cell size. The reliability of the improved FDM-FFT method for devices with arbitrary shape is verified by two models with different ways of discretization for the same device: the domain structure and dynamic switching properties are similar in Model A with just cubic cells and in Model B with cubic cells in the main body and prism cells at the edges.

Keywords

Neel temperature; discrete Fourier transforms; finite difference methods; magnetic domains; magnetic switching; magnetic thin film devices; micromagnetics; FDM-FFT method; Neel exchange length; computational micromagnetics; cubic cells; discretization; domain structure; dynamic switching properties; fast-fourier-transform method; finite difference method; prism cells; square magnetic thin film devices; Anisotropic magnetoresistance; Demagnetization; Magnetic domain walls; Magnetic domains; Micromagnetics; Reliability; Soft magnetic materials; Accuracy; limits; micromagnetics;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/TMAG.2011.2157474

Filename

6028212