• DocumentCode
    1332488
  • Title

    Monolithically integrable active microwave inductor

  • Author

    Chien, Heng-Chieh ; Frey, Jesse

  • Author_Institution
    Aerosp. Technol. Center, Allied-Signal Aerosp. Co., Columbia, MD
  • Volume
    24
  • Issue
    14
  • fYear
    1988
  • fDate
    7/7/1988 12:00:00 AM
  • Firstpage
    905
  • Lastpage
    906
  • Abstract
    A new approach to implementation of a GaAs monolithic microwave gyrator, or active inductor, is presented. The approach requires no resistors and only very small capacitors. The circuit is very compact, and facilitates small-area microwave inductors with values much larger than can be achieved by spiral inductors. A circuit built using this technique has an inductance of 5.8 nH over the frequency range of 45 MHz to 1 GHz. Methods to extend the operating frequency of the gyrator and improve the Q-value of the active inductor are discussed
  • Keywords
    III-V semiconductors; field effect integrated circuits; gallium arsenide; gyrators; inductors; microwave integrated circuits; 45 MHz to 1 GHz; GaAs; III-V semiconductors; MESFETs; MMIC; Q-factor improvement; active microwave inductor; monolithic microwave gyrator; small area inductors;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • Filename
    8417