• DocumentCode
    133277
  • Title

    Operating parameter based wirebond model for a power module

  • Author

    Gopi Reddy, Lakshmi ; Tolbert, Leon M. ; Ozpineci, Burak

  • Author_Institution
    EECS Dept., Univ. of Tennessee, Knoxville, TN, USA
  • fYear
    2014
  • fDate
    16-20 March 2014
  • Firstpage
    3502
  • Lastpage
    3506
  • Abstract
    Lifetime estimation of power semiconductors for various applications has gained technical importance. The main failures in high power semiconductors are caused by thermo-mechanical fatigue, mainly in solder and wirebonds, due to different coefficients of thermal expansions of the various packaging materials. Most of the lifetime models do not take all the operating parameters into account. There is a need to develop a generalized lifetime model specific to failure mechanisms that account for all of the operating parameters in an application. This paper presents finite element based stress simulations for varying operating parameters (current, temperature, etc.) for a fixed dimension wire.
  • Keywords
    power semiconductor devices; semiconductor device reliability; failure mechanism; finite element based stress simulation; generalized lifetime model; operating parameter based wirebond model; power module; power semiconductors; solder; thermo-mechanical fatigue; wirebonds; Copper; Current density; Finite element analysis; Insulated gate bipolar transistors; Silicon; Stress; Wires;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Applied Power Electronics Conference and Exposition (APEC), 2014 Twenty-Ninth Annual IEEE
  • Conference_Location
    Fort Worth, TX
  • Type

    conf

  • DOI
    10.1109/APEC.2014.6803813
  • Filename
    6803813