DocumentCode
133277
Title
Operating parameter based wirebond model for a power module
Author
Gopi Reddy, Lakshmi ; Tolbert, Leon M. ; Ozpineci, Burak
Author_Institution
EECS Dept., Univ. of Tennessee, Knoxville, TN, USA
fYear
2014
fDate
16-20 March 2014
Firstpage
3502
Lastpage
3506
Abstract
Lifetime estimation of power semiconductors for various applications has gained technical importance. The main failures in high power semiconductors are caused by thermo-mechanical fatigue, mainly in solder and wirebonds, due to different coefficients of thermal expansions of the various packaging materials. Most of the lifetime models do not take all the operating parameters into account. There is a need to develop a generalized lifetime model specific to failure mechanisms that account for all of the operating parameters in an application. This paper presents finite element based stress simulations for varying operating parameters (current, temperature, etc.) for a fixed dimension wire.
Keywords
power semiconductor devices; semiconductor device reliability; failure mechanism; finite element based stress simulation; generalized lifetime model; operating parameter based wirebond model; power module; power semiconductors; solder; thermo-mechanical fatigue; wirebonds; Copper; Current density; Finite element analysis; Insulated gate bipolar transistors; Silicon; Stress; Wires;
fLanguage
English
Publisher
ieee
Conference_Titel
Applied Power Electronics Conference and Exposition (APEC), 2014 Twenty-Ninth Annual IEEE
Conference_Location
Fort Worth, TX
Type
conf
DOI
10.1109/APEC.2014.6803813
Filename
6803813
Link To Document