Title :
Circuit model of UTC-PD with high power and enhanced bandwidth technique
Author :
Khanra, Senjuti ; Barman, Abhirup Das
Author_Institution :
Inst. of Radio Phys. & Electron., Univ. of Calcutta, Kolkata, India
Abstract :
An electrical equivalent circuit model of InGaAs/InP uni travelling carrier photodiode is presented. The model is suitable to be built on any electrical circuit simulator to perform design and optimize the device parameters. We have shown a novel technique of increasing bandwidth of the device by inserting a small shunt inductance in series with the load without sacrificing the device output photocurrent and linearity to a large extent.
Keywords :
III-V semiconductors; equivalent circuits; gallium arsenide; indium compounds; integrated optoelectronics; optimisation; photodiodes; photoemission; semiconductor device models; InGaAs-InP; UTC-PD; circuit model; device output photocurrent; device parameter optimisation; electrical circuit simulator; electrical equivalent circuit model; enhanced bandwidth technique; linearity; shunt inductance; unitravelling carrier photodiode; Absorption; Bandwidth; Inductance; Integrated circuit modeling; Load modeling; Photoconductivity; Photodiodes; circuit model; inter-modulation; photodiode;
Conference_Titel :
Numerical Simulation of Optoelectronic Devices (NUSOD), 2014 14th International Conference on
Conference_Location :
Palma de Mallorca
Print_ISBN :
978-1-4799-3681-6
DOI :
10.1109/NUSOD.2014.6935371
